PT850 Silicon Phototransistor Ambient Light Sensor
The PT850 is a high-sensitivity silicon phototransistor ambient light sensor in a DIP package. With a photosensitive peak wavelength of 850nm, it serves as an ideal substitute for traditional CDS photosensitive resistors, suitable for various applications requiring ambient light intensity detection.
Download PDF DatasheetProduct Features
- ◆ High sensitivity with 850nm peak wavelength
- ◆ High reliability
- ◆ Low power consumption
- ◆ RoHS compliant
- ◆ DIP package for easy installation
Technical Specification
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Photosensitive Peak Wavelength (λp) | - | - | 850 | - | nm |
| Sensitivity Wave Width (λ) | - | 400 | - | 1100 | nm |
| Collector-Emitter Breakdown Voltage (Bvceo) | Ic=100μA, Ee=0mW/cm² | 30 | - | - | V |
| Emitter-Collector Breakdown Voltage (Bveco) | Ie=10μA, Ee=0mW/cm² | 6 | - | - | V |
| Collector-Emitter Saturation Voltage (Vce(sat)) | Ic=2mA, Ee=1mW/cm² | - | - | 0.4 | V |
| Photo-current (IL) @ 10 Lux | VCE=5V | 5 | 9 | 12 | μA |
| Photo-current (IL) @ 30 Lux | VCE=5V | 15 | 27 | 36 | μA |
| Photo-current (IL) @ 100 Lux | VCE=5V | 50 | 90 | 120 | μA |
| Dark Current (Iceo) | VCE=5V, Ev=0Lux | - | - | 0.1 | μA |
| Rise Time (tr) | VCE=5V, IC=1mA, RL=1000Ω | - | - | 15 | μs |
| Fall Time (tf) | VCE=5V, IC=1mA, RL=1000Ω | - | - | 15 | μs |
| Collector-Emitter Voltage (VCEO) | - | - | - | 30 | V |
| Emitter-Collector Voltage (VECO) | - | - | - | 6 | V |
| Power Dissipation (PC) | - | - | - | 70 | mW |
| Operating Temperature (Topr) | - | -30 | - | +85 | °C |
| Storage Temperature (Tstg) | - | -40 | - | +100 | °C |
