GaN Series UV Photodetector LD-G410-100T
The LD-G410-100T is a broadband ultraviolet photodiode based on InGaN material, operating in photovoltaic mode and housed in a TO-46 metal package. This detector responds to UVA, UVB, and UVC bands, featuring good visible blindness, high responsivity, and low dark current. It is suitable for applications such as UV radiation monitoring, UV LED monitoring, and UV curing.
Download PDF DatasheetProduct Features
- ◆ Indium Gallium nitride based material
- ◆ Broad band UVA+UVB+UVC photodiode
- ◆ Photovoltaic mode operation
- ◆ TO-46 metal housing
- ◆ Good visible blindness
- ◆ High responsivity and low dark current
Technical Specification
| Parameter | Specification |
|---|---|
| Spectral characteristics (25 °C) | |
| Wavelength of peak responsivity | 410 nm |
| Peak responsivity (at 410 nm) | 0.265 A/W |
| Spectral response range | 220~440 nm |
| UV/visible rejection ratio (Rmax/R440 nm) | >10^4 |
| General characteristics (25 °C) | |
| Chip size | 1 mm² |
| Dark current (1 V reverse bias) | <1 nA |
| Capacitance (at 0 V and 1 MHz) | 300 pF |
| Temperature coefficient | -0.1 %/°C |
| Maximum ratings | |
| Operation temperature range | -40~85 °C |
| Storage temperature range | -40~85 °C |
| Soldering temperature (3 s) | 260 °C |
| Reverse voltage | 10 V |
