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LD-G375-100T GaN Series UV Photodetector

LD-G375-100T GaN Series UV Photodetector

The LD-G375-100T is a broadband ultraviolet photodetector based on InGaN material, covering UVA, UVB, and UVC bands. Operating in photovoltaic mode and housed in a TO-46 metal package, it features excellent visible blindness, high responsivity, and low dark current, making it suitable for UV radiation monitoring, dose measurement, and curing applications.

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Product Features

  • Indium Gallium Nitride (InGaN) based material
  • Broadband UVA+UVB+UVC photodiode
  • Photovoltaic mode operation
  • TO-46 metal housing
  • Good visible blindness
  • High responsivity and low dark current

Technical Specification

Parameter Symbol Value Unit
Spectral Characteristics (25 °C)
Wavelength of Peak Responsivity λmax 375 nm
Peak Responsivity (at 375 nm) Rmax 0.243 A/W
Spectral Response Range - 220~400 nm
UV/Visible Rejection Ratio (Rmax/R400 nm) VB >10^4 -
General Characteristics (25 °C)
Chip Size A 1 mm²
Dark Current (1 V reverse bias) Id <1 nA
Capacitance (at 0 V and 1 MHz) C 60 pF
Temperature Coefficient Tc 0.05 %/°C
Maximum Ratings
Operation Temperature Range Topt -40~85 °C
Storage Temperature Range Tstor -40~85 °C
Soldering Temperature (3 s) Tsold 260 °C
Reverse Voltage VRmax 10 V
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