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InSb Hall Element

InSb Hall Element

A high-sensitivity Hall effect sensor element based on Indium Antimonide (InSb) material, designed for precise magnetic field detection, outputting a voltage signal proportional to the magnetic field strength.

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Product Features

  • High sensitivity Hall voltage output
  • Wide operating temperature range (-40°C to 110°C)
  • Symmetrical input and output resistance for easy circuit design
  • Low offset voltage for improved measurement accuracy

Technical Specification

Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Max. Input Voltage (Vc) Ta=25°C - - 5 V
Max. Input Power (PD) Ta=25°C - - 25 mW
Operating Temp. Range (Topr) - -40 - 110 °C
Storage Temp. Range (TSTG) - -40 - 125 °C
Electrical Characteristics (Ta=25°C)
Output Hall Voltage (VH*) B=50mT, Vc=1V 196 - 370 mV
Input Resistance (Rin) B=0mT, Ic=0.1mA 240 - 550 Ω
Output Resistance (ROUT) B=0mT, Ic=0.1mA 240 - 550 Ω
Offset Voltage (Vos) B=0mT, Vc=1V -7 - +7 mV
Temp. Coeff. of VH (αVH*) B=50mT, Ic=1mA, Ta=0~40°C - 1.8 - %/°C
Temp. Coeff. of Rin (αRin*) B=50mT, Ic=5mA, Ta=0~40°C - -1.8 - %/°C
Linearity (ΔK*) B=0.1/0.5T, Ic=5mA - - 0.5 %
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