GaN Series UV Photodetector LD-G355-009S
A gallium nitride-based broadband UVA+UVB photodiode operating in photovoltaic mode, featuring high responsivity, low dark current, and excellent visible blindness. It is suitable for applications such as UV index monitoring, UV radiation dose measurement, and flame detection.
Download PDF DatasheetProduct Features
- ◆ Gallium nitride based material
- ◆ Broad band UVA+UVB photodiode
- ◆ Photovoltaic mode operation
- ◆ SMD2835 package
- ◆ Good visible blindness
- ◆ High responsivity and low dark current
Technical Specification
| Parameter | Specification |
|---|---|
| Spectral Characteristics (25 °C) | |
| Wavelength of Peak Responsivity | 355 nm |
| Peak Responsivity (at 355 nm) | 0.18 A/W |
| Spectral Response Range | 280~370 nm |
| UV/Visible Rejection Ratio (Rmax/R400 nm) | >10^4 |
| General Characteristics (25 °C) | |
| Chip Size | 0.09 mm² |
| Dark Current (1 V Reverse Bias) | <10 pA |
| Capacitance (at 0 V and 1 MHz) | 2.3 pF |
| Temperature Coefficient | -0.1 %/°C |
| Maximum Ratings | |
| Operation Temperature Range | -28~85 °C |
| Storage Temperature Range | -40~85 °C |
| Soldering Temperature (3 s) | 260 °C |
| Reverse Voltage | 10 V |
