GaAs Hall Element
A high-performance Hall effect sensor based on Gallium Arsenide (GaAs) material. This element detects magnetic field strength and converts it into a voltage signal, offering excellent temperature stability and linearity, making it suitable for a wide range of industrial and consumer electronic applications.
Download PDF DatasheetProduct Features
- ◆ Utilizes GaAs material for stable performance
- ◆ Wide operating temperature range (-40°C to +125°C)
- ◆ High linearity and low temperature coefficient
- ◆ Available in a compact SSOT-4 package
Technical Specification
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Max. Input Voltage (Vc) | Ta=25°C | 8 | V | ||
| Max. Input Power (PD) | Ta=25°C | 150 | mW | ||
| Operating Temp. Range (Topr) | -40 | +125 | °C | ||
| Storage Temp. Range (TSTG) | -40 | +130 | °C | ||
| Electrical Characteristics (Ta=25°C) | |||||
| Output Hall Voltage (VH*) | B=50mT, Vc=6V | 55 | 75 | mV | |
| Input Resistance (Rin) | B=0mT, Ic=0.1mA | 650 | 850 | Ω | |
| Output Resistance (Rout) | B=0mT, Ic=0.1mA | 650 | 850 | Ω | |
| Offset Voltage (Vos) | B=0mT, Vc=6V | -11 | +11 | mV | |
| Temp. Coeff. of VH (αVH*) | B=50mT, Ic=5mA, Ta=25~125°C | -0.06 | %/°C | ||
| Temp. Coeff. of Rin (αRin*) | B=0mT, Ic=0.1mA, Ta=25~125°C | 0.3 | %/°C | ||
| Linearity (ΔK*) | B=0.1/0.5T, Ic=5mA | 2 | % |
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