GaAs Hall Element
A high-performance Hall effect sensor element based on Gallium Arsenide (GaAs) material. It utilizes the Hall effect to convert magnetic field strength into a proportional voltage signal, offering excellent temperature stability and linearity. It is suitable for a wide range of industrial and consumer electronics applications, such as position detection, current sensing, and speed measurement.
Download PDF DatasheetProduct Features
- ◆ Based on GaAs material for stable and reliable performance
- ◆ Wide operating temperature range (-40°C to +125°C)
- ◆ Excellent output voltage linearity and low temperature coefficient
- ◆ Symmetrical input/output resistance for ease of circuit design
Technical Specification
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Max. Input Voltage (Vc) | Ta=25°C | - | - | 5 | V |
| Max. Input Power (PD) | Ta=25°C | - | - | 25 | mW |
| Operating Temp. Range (Topr) | - | -40 | - | +125 | °C |
| Storage Temp. Range (TSTG) | - | -45 | - | +150 | °C |
| Electrical Characteristics (Ta=25°C) | |||||
| Output Hall Voltage (VH) | B=50mT, Ic=5mA | 36 | 45 | 54 | mV |
| Input Resistance (Rin) | B=0mT, Ic=0.1mA | 650 | 750 | 850 | Ω |
| Output Resistance (ROUT) | B=0mT, Ic=0.1mA | 650 | 750 | 850 | Ω |
| Offset Voltage (Vos) | B=0mT, Ic=5mA | -5 | - | +5 | mV |
| Temp. Coeff. of VH (αVH) | B=50mT, Ic=5mA, Ta=25~125°C | - | - | 0.06 | %/°C |
| Temp. Coeff. of Rin (αRin) | B=0mT, Ic=0.1mA, Ta=25~125°C | - | - | 0.3 | %/°C |
| Linearity (ΔK) | B=0.1/0.5T, Ic=5mA | -1 | - | +1 | % |
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